We are challenging to develop a next generation RF device following to RF power amplifier.
1)High efficiency and high linearity RF Power Amplifier
HiPAE technology controls both current and voltage Bias on real time and reduces the power
consumption for linear power amplifier that is used for high Peak power OFDM modulation
like a WiMAX.
HiPAE technology
2)Millimeter wave band Power Amplifier
Millimeter wave band will be a next generation major short range high speed communication band.
We are challenging millimeter wave band transceiver and power amplifier development.
3)GaN process RF Power Amplifier
GaN process enables small and high power RF power amplifier.
